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Boradband High Power Amplifiers

Amplifiers up to 3GHz

Modules

AVBR0825H52

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AVBR0825H52

The AVBR0825H52 is a 150W high gain Solid State Broadband High Power Amplifier. This amplifier module utilizes the latest high power RF GaN transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for Communication, Test & Measurement, Defense and EMC testing.

Start Freq. (MHz) : 800 MHz

Stop Freq. (MHz) : 2500 MHz

Pout (W) : 150 Watts

Gain(dB) : 51 dB

Vd (VDC) : 30 VDC

Current(A) : 13 A

Description +

Features +

0.8GHz-2.5GHz frequency range	Solid-state Class AB Broadband design
Psat 51.8dBm Typ, 50.8dBm Min	Instantaneous ultra-broadband
Power gain 51dB Typ.	Suitable for CW and Pulse
50 ohm input/output impedance	Small and lightweight
Built-in control, monitoring and protection circuits	High reliability and ruggedness

Specification +

Description	Symbol	Min	Typ	Max	Unit
Operating Frequency	BW	0.8		2.5	GHz
Output Power CW [ Pin= 0 dBm]	Psat	120	150		W
Power Gain @ PSAT	Gp	50	51		dB
Power Gain Flatness @ Rated PSAT	∆Gp		±1	±1.5	dB
Input Power for Rated PSAT	PIN		0		dBm
Harmonics @ Pout =50W	2^nd /3^rd		-20/-25	-15/-20	dBc
Noise Figure(If Needed, Please Contact)	NF		8	10	dB
Spurious Signals@ Pout =50W	Spur		-70	-65	dBc
Input VSWR	VSWR_in		1.3	1.5	/
Output VSWR	VSWR_out		1.5	2	/
Third Order Intercept Point 2-Tone @ 41dBm/Tone, 1MHz Space(If Needed, Please Contact)	OIP3		54		dBm
Operating Voltage	VDC	26	30	32	V
Current Consumption @Pout=120~150W	IDD		13.0	16.5	Amp
Current Consumption @ Shutdown	ISD		0.1	0.2	Amp
Switching Time @ 1kHz TTL, PIN = 0dBm	TON/TOFF		2	3	µs