PRODUCT


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AVBR0820H52

Start Freq. (MHz) : 800

Stop Freq. (MHz) : 2000

Pout (W) : 170

Gain(dB) : 52

Vd (VDC) : 42

Current(A) : 10

Description

The AVBR0820H52 is a 170 W high gain Solid State Broadband High Power Amplifier with High Average Efficiency around 35%. This amplifier module utilizes the latest high power RF GaN transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for broadband jamming and EMC testing, and good consistency for high power combination.

Features

0.8GHz-2GHz frequency range                                                      Solid-state Class AB Broadband design
Psat 52.3dBm typ., 51.8dBm Min.                                                Instantaneous ultra-broadband
High Average Efficiency around 42%                                            Suitable for CW, and Pulse
50 ohm input/output impedance                                                 Small and lightweight
Output Power Level Indicator                                                       High reliability and ruggedness

Description

Description

Symbol

Min

Typ

Max

Unit

Operating Frequency

BW

0.8

 

2

GHz

Output Power CW @ Pin = 0dBm

Psat

150

170

 

W

Power Gain @ Pin = 0dBm

Gp

50

52

 

dB

Power Gain Flatness @ Pin = 0dBm

∆Gp

 

±1.2

±1.5

dB

Input Power for Rated PSAT

PIN

-2

0

2

dBm

Harmonics @ Pin = -5dBm

2nd /3rd

 

-15/-25

-10/-15

dBc

Spurious Signals@ Pin = 0dBm

Spur

 

-70

-60

dBc

Input Return Loss

S11

 

 

-10

dB

Third Order Intercept Point

2-Tone @ 43dBm/Tone, 100kHz Spacing*

 

IP3

 

 

53

 

 

dBm

Operating Voltage

VDC

36

42

44

V

Quiescent Current @Enable=+3.3V

IDQ

 

1.8

 

A

Current Consumption @Pout= 150~170 W

IDD

 

10

13

A

Power Added Efficiency

PAE

35

42

 

%

Module to Module Amplitude Tracking   ( ± )

∆Gt

 

 

1

dB

Module to Module Phase Tracking  ( ± )

∆Gp

 

 

10

°

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