PRODUCT


+

AVBR2040H52

Start Freq. (MHz) : 2000

Stop Freq. (MHz) : 4000

Pout (W) : 170

Gain(dB) : 56

Vd (VDC) : 28

Current(A) : 20

Description

The AVBR2040H52 is a 170W high gain Solid State Broadband High Power Amplifier with High Average Efficiency around 35%. This amplifier module utilizes the latest high power RF GaN transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for broadband jamming and EMC testing, and good consistency for high power combination.

Features

2 GHz-4 GHz frequency range                                           Solid-state Class AB Broadband design
Psat 52.3 dBm typ. 51.8 dBm Min.                                     Instantaneous ultra-broadband
High Average Efficiency around 35%                                Suitable for CW, and Pulse
50 ohm input/output impedance                                     Small and lightweight
Output Power Level Indicator(optional)                          High reliability and ruggedness

Description

Description

Symbol

Min

Typ

Max

Unit

Operating Frequency

BW

2

 

4

GHz

Output Power CW @ Pin = -4dBm

Psat

150

170

 

W

Power Gain @ Pin = -4dBm

Gp

54

56

 

dB

Power Gain Flatness @ Pin = -4dBm

∆Gp

 

±1.5

±1.8

dB

Input Power for Rated PSAT

PIN

-2

0

2

dBm

Harmonics @ Pin = -10dBm

2nd /3rd

 

-20/-25

-12/-15

dBc

Spurious Signals@ Pin = -4dBm

Spur

 

-70

-60

dBc

Input Return Loss

S11

 

 

-10

dB

Third Order Intercept Point

2-Tone @ 43dBm/Tone, 100kHz Spacing*

 

IP3

 

 

53

 

 

dBm

Operating Voltage

VDC

26

28

30

V

Quiescent Current @Enable=+3.3V

IDQ

 

4

 

A

Current Consumption @Pout= 150~170 W

IDD

 

20

24

A

Module to Module Amplitude Tracking   ( ± )

∆Gt

 

1

 

dB

Module to Module Phase Tracking  ( ± )

∆Gp

 

15

 

°

Switching Time @ 1kHz TTL, Pin = 0dBm

TON/TOFF

 

2

5

µs

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