600W X-Band GaN Pulse Amplifier — AVNP9250H58
2026-06-30
The AVNP9250H58 is a high-power X-Band pulsed amplifier featuring advanced GaN RF transistor technology and solid-state design. Operating from 8.9–9.6 GHz, it delivers 600W peak output power with 58 dB high gain, providing high-performance amplification for demanding pulse RF applications.
With a typical PAE of 23%, integrated control & monitoring functions, and built-in protection features, the AVNP9250H58 is designed to achieve stable operation, simplified integration, and reliable performance in high-power pulse systems.
For detailed specifications or technical support, please feel free to contact us.
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600W X-Band GaN Pulse Amplifier — AVNP9250H58
The AVNP9250H58 is a high-power X-Band pulsed amplifier featuring advanced GaN RF transistor technology and solid-state design. Operating from 8.9–9.6 GHz, it delivers 600W peak output power with 58 dB high gain, providing high-performance amplification for demanding pulse RF applications.
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2026-06-30
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600W X-Band GaN Pulse Amplifier — AVNP9250H58
The AVNP9250H58 is a high-power X-Band pulsed amplifier featuring advanced GaN RF transistor technology and solid-state design. Operating from 8.9–9.6 GHz, it delivers 600W peak output power with 58 dB high gain, providing high-performance amplification for demanding pulse RF applications.
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