Turning GaN Potential into 800W of RF Power

2025-09-09


Every pulse matters. Every watt counts. The AVNP5600H59 delivers 800W of solid-state RF power in a compact, high-gain amplifier designed for demanding pulsed applications. Leveraging advanced GaN transistor technology, this amplifier combines efficiency, reliability, and intelligent control in a single module.

Every pulse matters. Every watt counts. The AVNP5600H59 delivers 800W of solid-state RF power in a compact, high-gain amplifier designed for demanding pulsed applications. Leveraging advanced GaN transistor technology, this amplifier combines efficiency, reliability, and intelligent control in a single module.

 

Key Features:
Frequency range: 5.3 – 5.8 GHz
Output power: 58.5 dBm min, 59 dBm typ. (800 W)
High gain: 59 dB
Solid-state Class A/B design for reliable performance
Wideband chirp capability
Built-in control, monitoring & protection circuits
Compact and lightweight, easy to integrate

 

Whether for pulsed RF systems or other high-power applications, the AVNP5600H59 ensures consistent, high-quality performance while maintaining ease of integration and operational safety.

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