400W L-Band Solid State Pulse Power Amplifier—AVPR1100H56

2026-01-20


AVPR1100H56 is a 400W solid-state pulsed amplifier with advanced RF LDMOS transistors. It includes built-in control, monitoring, and protection, ideal for high-power pulse or radar applications.

AVPR1100H56 is a 400W solid-state pulsed amplifier with advanced RF LDMOS transistors. It includes built-in control, monitoring, and protection, ideal for high-power pulse or radar applications.

High Efficiency & Simplified System
Delivers full output with just 0 dBm drive, reducing driver requirements, simplifying system design, and enhancing overall reliability for radar and pulsed RF systems.

 

Fast Pulse Response, Clean Pulse Shape

Designed for demanding pulse applications, AVPR1100H56 offers fast rise and fall times (≤50 ns) with low pulse droop, ensuring excellent pulse fidelity and timing accuracy in radar systems.

 

Rugged & Reliable Operation

Built-in over-temperature, over-current, and duty-cycle protection, together with high VSWR tolerance, ensure reliable operation in harsh and high-power operating environments.

Don’t Be Misled by the Datasheet: The Real Truth About Amplifier Lifetime(1)

Why can two “100W” RF amplifiers have completely different lifetimes —one operating reliably for 10 years, while another degrades in just three months?

2026-01-29



Don’t Be Misled by the Datasheet: The Real Truth About Amplifier Lifetime(1)

Why can two “100W” RF amplifiers have completely different lifetimes —one operating reliably for 10 years, while another degrades in just three months?

New Models Added This Week

This week, we have expanded our existing broadband RF amplifier product lines with several new models, further enriching our solutions for RF test, measurement, and system integration applications.

What is Flatness?

In RF power amplifier datasheets, you may often see specifications such as ±0.5 dB or ±1 dB.

400W L-Band Solid State Pulse Power Amplifier—AVPR1100H56

AVPR1100H56 is a 400W solid-state pulsed amplifier with advanced RF LDMOS transistors. It includes built-in control, monitoring, and protection, ideal for high-power pulse or radar applications.

More Power, More Interference?

Is higher power always better for interference? In modern electronic interference systems, this is no longer the case. Advanced detection and localization technologies allow interference signals to be easily detected and characterized. Spurious emissions and phase noise make high-power signals with poor spectral purity easier to identify—and counter.

One Band. More Power. More Options.

Our latest RF GaN amplifiers cover the full power range from 30 W to 120 W, delivering stable, high-performance operation across 2-6 GHz frequency range. Ideal for broadband interference, EMC testing, and other demanding RF applications.