0.7–3.0 GHz GaN Wideband Power Amplifier——AVBR0730H51
2026-05-12
We are excited to introduce one of our mature and proven products — the AVBR0730H51. This high-performance GaN wideband power amplifier is designed for demanding RF systems requiring high output power, wide bandwidth, and excellent linearity.
Ultra-Wideband Coverage
Operating from 0.7–3.0 GHz, covering UHF, LTE, 5G Sub-3GHz, satellite communications, radar, and RF test & measurement bands.
A single module replaces multiple narrowband amplifiers, significantly reducing system complexity and cost.
High Power & High Gain Combination
Delivers 51 dBm (120 W) typ. / 49.5 dBm min. Psat with 50 dB typical gain.
Achieves full output power with 0 dBm input drive, minimizing front-end requirements and simplifying system design.
Excellent Gain Flatness
Maintains ±1.3 dB typ. (±1.8 dB max) across the full frequency range, ensuring stable amplitude performance for wideband signals and advanced modulation systems.
GaN-Based High Efficiency & Linearity
Built on advanced high-power GaN RF technology with a wideband Class AB architecture, balancing efficiency and linearity.
OIP3: 54 dBm
Spurious: -70 dBc
Harmonics: -20 / -25 dBc (typ.)
Ensures clean spectral performance and strong suitability for linear RF systems and power-combined architectures.
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50W Power Amplifier Module——AVBR1060H47
The AVBR1060H47 combines RF GaN technology with a Class AB broadband architecture, providing instantaneous ultra-broadband operation for wideband RF applications.
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2026-08-11
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50W Power Amplifier Module——AVBR1060H47
The AVBR1060H47 combines RF GaN technology with a Class AB broadband architecture, providing instantaneous ultra-broadband operation for wideband RF applications.
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Choosing the right RF amplifier class requires balancing linearity, efficiency, output power, bandwidth, and other system requirements—there is no one-size-fits-all solution.
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Understanding the difference between Small Signal Gain, Linear Gain, and Saturated Gain helps engineers evaluate amplifier performance with the right expectations—not just the highest number.
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For broadband RF systems, the right amplifier selection depends not only on output power, but also on signal quality, integration needs, and operating conditions.
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IMD, IP3 & OIP3 — Three RF Parameters That Are Often Confused
When an amplifier becomes less linear, it generates more IMD. Engineers use IP3 to estimate this linearity, while OIP3 expresses the same linearity at the amplifier output.
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High Power Broadband RF Amplifier Subsystem —— AVBR0960U46
The AVBR0960U46 is a 40W Solid State Broadband High Power Amplifier System covering 0.9–6.0 GHz. Built with advanced GaN technology, it delivers 46 dB gain and 44 dBm CW P1dB, while integrating intelligent control, monitoring, and protection functions for reliable operation in CW/Pulse systems, LTE & 5G communication signal testing, and EMC applications.
AmpliVisionS
Tell: +86(28)61892455
E-mail: info@amplivisions.com
Address: 611731, 555 Tianjiao Road, High-Tech (West) Zone, Chengdu City, P.R. China
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