6–18 GHz GaN Power Amplifiers

2026-07-28


For broadband RF systems, the right amplifier selection depends not only on output power, but also on signal quality, integration needs, and operating conditions.

For broadband RF systems, the right amplifier selection depends not only on output power, but also on signal quality, integration needs, and operating conditions.

 

AmpliVisionS offers two GaN broadband amplifier solutions designed for different system requirements.

 

 AVBR60180H46-4

Designed for compact systems requiring stable signal performance and efficient operation.

 

Key advantages:

 ±1.2 gain flatness with minimal output variation across the frequency range

• Low harmonic and spurious levels for clean broadband signals

• Compact, lightweight design with laser-sealed housing for improved environmental reliability

• Low power consumption for easier power and thermal management

 

AVBR60180H50

Designed for systems requiring higher RF output capability and continuous operation.

 

Key advantages:

• 100W saturated output capability for high-power broadband systems

• Optimized efficiency for reduced thermal stress during long-duration operation

• Complete gain performance data across different input power levels for system simulation and integration

• Slim mechanical design for easier system integration

 

Common Technical Features

• 28V GaN Class AB architecture

• Built-in current and temperature monitoring

• High VSWR and input power tolerance

 

From compact broadband integration to high-power RF systems, AmpliVisionS provides flexible GaN amplifier solutions across the 6–18 GHz band.

 

Contact us to discuss your RF amplifier requirements.

6–18 GHz GaN Power Amplifiers

For broadband RF systems, the right amplifier selection depends not only on output power, but also on signal quality, integration needs, and operating conditions.

2026-07-28



6–18 GHz GaN Power Amplifiers

For broadband RF systems, the right amplifier selection depends not only on output power, but also on signal quality, integration needs, and operating conditions.

IMD, IP3 & OIP3 — Three RF Parameters That Are Often Confused

When an amplifier becomes less linear, it generates more IMD. Engineers use IP3 to estimate this linearity, while OIP3 expresses the same linearity at the amplifier output.

High Power Broadband RF Amplifier Subsystem —— AVBR0960U46

The AVBR0960U46 is a 40W Solid State Broadband High Power Amplifier System covering 0.9–6.0 GHz. Built with advanced GaN technology, it delivers 46 dB gain and 44 dBm CW P1dB, while integrating intelligent control, monitoring, and protection functions for reliable operation in CW/Pulse systems, LTE & 5G communication signal testing, and EMC applications.

RFPA Module or Subsystem? Think Beyond the Product.

When selecting an RF power amplifier, many discussions start with the product. Experienced system engineers often start somewhere else.

120W RF Power Amplifier——AVBR1030H51

The AVBR1030H51 delivers 120W typical output power across 1.0–3.0 GHz, combining high gain (51 dB typ), excellent ±1 dB gain flatness, and advanced GaN technology for stable, high-efficiency performance.

RFPA MODULE VS. RFPA SUBSYSTEM:WHAT’S THE DIFFERENCE?

RFPA Module or RFPA Subsystem—which one does your project really need? Although they both amplify RF signals, they are designed for different levels of system integration.