1.0–2.5 GHz Wideband 50W GaN Power Amplifier with 0 dBm Drive — AVBR1025H47

2026-06-02


The AVBR1025H47 is a compact wideband GaN power amplifier designed for RF system integration.

The AVBR1025H47 is a compact wideband GaN power amplifier designed for RF system integration.

 

Covering 1.0–2.5 GHz, it delivers 50W output power with a 0 dBm drive level, enabling simplified RF chain design with reduced or eliminated driver stages.

 

With 48 dB gain, the module supports efficient signal amplification in compact system architectures.

 

It is optimized for high linearity performance in linear RF transmission systems, ensuring stable signal integrity under complex modulation conditions with IP3 ≈ 50–52 dBm.

 

The design is also optimized for power combining architectures, supporting consistent amplitude and phase performance required for scalable high-power RF system implementations.

 

For further technical details or application support, please feel free to contact us.

RFPA Module or Subsystem? Think Beyond the Product.

When selecting an RF power amplifier, many discussions start with the product. Experienced system engineers often start somewhere else.

2026-07-16



RFPA Module or Subsystem? Think Beyond the Product.

When selecting an RF power amplifier, many discussions start with the product. Experienced system engineers often start somewhere else.

120W RF Power Amplifier——AVBR1030H51

The AVBR1030H51 delivers 120W typical output power across 1.0–3.0 GHz, combining high gain (51 dB typ), excellent ±1 dB gain flatness, and advanced GaN technology for stable, high-efficiency performance.

RFPA MODULE VS. RFPA SUBSYSTEM:WHAT’S THE DIFFERENCE?

RFPA Module or RFPA Subsystem—which one does your project really need? Although they both amplify RF signals, they are designed for different levels of system integration.

A Compact and Rugged 60W X-Band Power Amplifier——AVBR80120H48

Designing broadband X-band systems often requires balancing gain, bandwidth, size, and reliability.

Why Do RF Power Amplifiers Fail Outside the Lab?

Engineer's Law #1: The harsher the environment, the more likely the “perfect”amplifier suddenly becomes imperfect.

600W X-Band GaN Pulse Amplifier — AVNP9250H58

The AVNP9250H58 is a high-power X-Band pulsed amplifier featuring advanced GaN RF transistor technology and solid-state design. Operating from 8.9–9.6 GHz, it delivers 600W peak output power with 58 dB high gain, providing high-performance amplification for demanding pulse RF applications.