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LDMOS vs GaN: A Silent Battle for RF Power
2025-12-11
In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.
LDMOS continues to lead in cost-sensitive, high-volume applications. Its proven reliability, stable supply chain, and excellent ruggedness keep it dominant across sub-GHz systems, broadcast, and traditional communication infrastructure. For many engineering teams, LDMOS remains the most predictable and economically efficient choice.
But GaN is rewriting performance expectations. With higher power density, wider bandwidth, and strong high-frequency capability, GaN enables smaller, lighter, and more energy-efficient amplifier designs—especially in radar, electronic warfare, SATCOM, and next-generation communication systems. As demand shifts toward wideband, pulsed, and high-efficiency solutions, GaN’s momentum continues to accelerate.
This silent battle has no single winner. Instead, the market is moving toward application-driven coexistence: LDMOS for robust, cost-optimized platforms; GaN for compact, broadband, and high-performance requirements.
At AmpliVisionS, we embrace the strengths of both technologies. Our next-generation GaN amplifiers push the boundaries of power and bandwidth, while our field-proven LDMOS solutions deliver unmatched stability and value. Together, they empower customers to choose the perfect path forward—maximum performance when needed, maximum efficiency by design.
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LDMOS vs GaN: A Silent Battle for RF Power
In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.
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2025-12-11
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30W Wideband RF Amplifier with High Gain
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A Mass-Produced 70W Broadband Amplifier with Over 40% Efficiency—AVBC0307H49
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