30W Wideband RF Amplifier with High Gain
2025-12-08
The AVBR1060H45 is a 30W high-gain, solid-state, broadband power amplifier. It utilizes the latest high-power RF GaN transistors and features built-in control and monitoring, along with protection functions to ensure high availability.
Unleash unmatched signal strength with the AVBR1060H45. It breaks the norm with 45 dB high gain—well above the standard 35–40 dB. When your application demands power, this amplifier delivers.
Keep your signals clean and precise. With ultra-low spurious emissions (Spur ≤ −70 dBc), the AVBR1060H45 ensures crystal-clear output, giving your radar, communications, and test systems a competitive edge.
Enjoy broadband performance without compromise. Covering 1–6 GHz, this amplifier maintains tight gain flatness (±1.5 dB typ.), ensuring consistent, reliable performance across the entire spectrum.
All this power comes in a compact, lightweight design (170 × 165 × 25 mm, 1.3 kg), ready to integrate seamlessly into any system—proving that big performance doesn’t require a big footprint.
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LDMOS vs GaN: A Silent Battle for RF Power
In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.
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2025-12-11
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LDMOS vs GaN: A Silent Battle for RF Power
In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.
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30W Wideband RF Amplifier with High Gain
The AVBR1060H45 is a 30W high-gain, solid-state, broadband power amplifier. It utilizes the latest high-power RF GaN transistors and features built-in control and monitoring, along with protection functions to ensure high availability.
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Low-Spurious Output Becomes New Competitive Focus
As 5G/6G networks, satellite internet, and automotive radar rapidly expand, RF power amplifiers are facing a new competitive focus. Beyond output power and efficiency, the industry is placing greater emphasis on controlling spurious output (Spur), a shift that is redefining technology roadmaps and becoming essential for global market access.
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100W High-Efficiency Amplifier with Ultra-Low Spurious Signals—AVBR0510H50
The AVBR0510H50 is a 100W high gain Solid State Broadband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability.
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How to Evaluate RF Power Amplifiers and Select the Right Product for Your Application?
As wireless communication, radar, and advanced testing systems evolve, RF Power Amplifiers (RFPAs) have become key components determining overall system performance. Industry demand is shifting from a focus on raw power output to integrated requirements for high performance, stability, and intelligence, making the selection of the right RFPA critical to project timelines and application success.
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A Mass-Produced 70W Broadband Amplifier with Over 40% Efficiency—AVBC0307H49
The AVBC0307H49 is a 70W high-gain solid-state broadband high power amplifier designed for mission-critical applications. Built with the latest high-power RF LDMOS transistors, it integrates intelligent control, real-time monitoring, and multiple layers of protection to ensure long-term stability and availability. Its broadband performance makes it an excellent choice for jamming systems and EMC testing.
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