AVPR1100H56
PRODUCT
AVNR875H52
Start Freq. (MHz) :
790 MHz
Stop Freq. (MHz) :
960 MHz
Pout (W) :
180 Watts
Gain(dB) :
52 dB
Vd (VDC) :
28 VDC
Current(A) :
12 A
Description
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The AVNR875H52 is a 150W high gain Solid State Narrowband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for jamming and Modulated Signals testing.
Features
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0.79GHz-0.9GHz frequency range
Psat 52dBm Min
Power gain 52dB
50 ohm input/output impedance
Built-in control, monitoring and protection circuits
Solid-state Class AB Broadband design
Instantaneous ultra-broadband
Suitable for CW, and Pulse
Small and light weight
High reliability and ruggedness
Specification
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| Description | Symbol | Min | Typ | Max | Unlt |
|---|---|---|---|---|---|
| Operating Frequency | BW | 0.79 | 0.96 | GHz | |
| Output Power CW@ P1dB | Psat | 150 | 180 | W | |
| Power Gain @ Pin=0 dBm | Gp | 52 | dB | ||
| Power Gain Flatness @ Pin=0 dBm | ∆Gp | ±0.5 | ±1 | dB | |
| Input Power for Rated Power | PIN | -1 | 0 | 1 | dBm |
| Harmonics @ Pin=0 dBm | 2nd | -35 | dBc | ||
| Noise Figure | NF | N/A | dB | ||
| Spurious Signals@ Pin=0 dBm | Spur | -60 | dBc | ||
| Input Return Loss | S11 | -15 | -10 | dB | |
|
Third Order Intercept Point
2-Tone @ 40dBm/Tone, 100kHz Spacing
|
IP3 | N/A | dBc | ||
| Operating Voltage | VDC | 26 | 28 | 30 | V |
| Current Consumption @ Pout= 150W | IDD | 12 | 15 | A | |
| Switching Time @ 1kHz TTL, PIN = 0 dBm | TON/TOFF | 2 | 5 | µs |
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Time of issue:2021-09-22 10:46:18
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