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AVNR1050H53
AVNR1050H53
AVNR1050H53-2
AVNR1050H53
Start Freq. (MHz):900-1170
Pout (W):200
Start Freq. (MHz) : 900 MHz
Stop Freq. (MHz) : 1170 MHz
Pout (W) : 200 Watts
Gain(dB) : 54 dB
Vd (VDC) : 28 VDC
Current(A) : 23 A
AVNR1050H53
AVNR1050H53-2
Description +
The AVNR1050H53 is a 200W high gain Solid State Narrowband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for jamming and Modulated Signals testing.
Features +

0.9GHz-1.17GHz frequency range

Psat 53dBm Min

Power gain 53dB

50 ohm input/output impedance

Built-in control, monitoring and protection circuits

Solid-state Class AB Broadband design

Instantaneous ultra-broadband

Suitable for CW, and Pulse

Small and light weight

High reliability and ruggedness

Specification +
Description Symbol   Min Typ Max Unlt
Operating Frequency BW 0.9   1.17 GHz
Output Power CW@ P1dB Psat 180 200   W
Power Gain @ Pin=0 dBm Gp   54   dB
Power Gain Flatness @ Pin=0 dBm ∆Gp   ±0.5 ±1 dB
Input Power for Rated Power PIN -1 0 1 dBm
Harmonics @ Pin=0 dBm 2nd   -40   dBc
Noise Figure NF   N/A   dB
Spurious Signals@ Pin=0 dBm Spur     -60 dBc
Input Return Loss S11   -15 -10 dB
Third Order Intercept Point
2-Tone @ 40dBm/Tone, 100kHz Spacing
IP3   55   dBc
Operating Voltage VDC 26  28 30 V
Current Consumption @ Pout= 200W IDD   23 25 A
Switching Time @ 1kHz TTL, PIN = 0 dBm TON/TOFF   2 5 µs

 

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Time of issue:2021-09-22 10:46:18

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