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Start Freq. (MHz) : 2300 MHz
Stop Freq. (MHz) : 2500 MHz
Pout (W) : 100 Watts
Gain(dB) : 50 dB
Vd (VDC) : 28 VDC
Current(A) : 13.5 A
Description +

The AVNR2400H50 is a 100W high gain Solid State Narrowband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability. This amplifier is suitable for jamming and Modulated Signals testing.

Features +

2.3GHz-2.5GHz frequency range

Psat 50dBm Min

Power gain 50dB Min.

50 ohm input/output impedance

Built-in control, monitoring and protection circuits

Solid-state Class AB Broadband design

Instantaneous ultra-broadband

Suitable for CW, and Pulse

Small and light weight

High reliability and ruggedness

Specification +


Description Symbol Min Typ Max Unlt
Operating Frequency BW 2.11   2.17 GHz
Output Power CW@ Pin=0 dBm Psat 90 100   W
Power Gain @ Pin=0 dBm Gp 49 50.5   dB
Power Gain Flatness @ Pin=0 dBm ∆Gp   ±0.5 ±1 dB
Input Power for Rated Power PIN -1 0 1 dBm
Harmonics @ Pin=0 dBm
   -35   dBc
Noise Figure NF   N/A   dB
Spurious Signals@ Pin=0 dBm Spur     -60 dBc
Input Return Loss S11   -15 -10 dB
Third Order Intercept Point
2-Tone @ 40dBm/Tone, 100kHz Spacing
IP3   51   dBc
Operating Voltage VDC 26 28 30 V
Current Consumption @ Pout= 100W IDD   13.5 15 A
Switching Time @ 1kHz TTL, PIN = 0 dBm TON/TOFF   2 5 µs







Address:611731, 22 XinWen Road, High-Tech (West) Zone, 
Chengdu City, P.R. China


Time of issue:2021-09-22 10:46:18

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