GaN Power Amplifier Technology
- Time of issue:2021-12-17 15:18:35
AmpliVisionS is working at the leading edge of high power GaN solid-state amplifier research and development in China. Our R&D team menbers all graduated from top university of China and served in Companies like Huawei RF Department, NXP Semiconductor Division and CETC(China Electronic Technology Corporation- Institute) for more than ten years. With ten years of experience in power amplifier development and engineering, we aim to refine the reliable quality and competitive cost so that our customers have a great mind of price, and a higher level of satisfaction with our products.
We have the technology and program experience to look as far back and ahead as you need.
GaN devices are currently the most popular selection for power amplifier design. The high power density in GaN semiconductors presents a major thermal management challenge. We understand that pulling the heat away from the active region of the device is critical to maximizing the output power and reliability. Starting with the bare die, we work with our partners to optimize die attach process. Since even a small increase in thermal resistance results in a significant temperature rise, use of a high thermal conductivity material for die attach is critical. For example, using a gold-tin eutectic die attach process provides much better thermal conductivity than silver epoxy. However, achieving good die attach with high thermal conductivity requires more than simply choosing the correct material. The process must be carefully controlled. Since even small air voids under the die can greatly increase thermal resistance, they must be minimized, which requires experience, careful process control and techniques such as performing die attach in a vacuum. Validating die attach is also critical to ensuring proper heat transfer. AmpliVisionS accomplish this by scanning acoustic microscopy (C-SAM), which identifies voids between the die and the thermal spreader or baseplate.
Nonlinear device modeling for power amplifier design is another challenge; since GaN is a newer technology, its models are less mature. To address this lack of accurate models, our design engineers found own solutions:
Rely on measured load-pull data to determine the ideal output impedance match to optimize the RF power.
Through experience, adjust the simulation models to improve the accuracy for the specific design conditions. Substitute a measured, small-signal S-parameter file for the nonlinear model to confirm similar results for linear operation.
AmpliVisionS master the latest core technologies of solid state power amplifiers, including the techniques and tips about wideband high efficiency matching, broadband linearization, high linear cascade design methodology, and wideband equalizer. Benefit from these advanced technologies, our products provide high efficiency, high power levels, high linearity and small footprint. AmpliVisionS SSPAs are an excellent alternatives to applications that currently are using Traveling Wave Tube (TWT) Amplifiers.
So, if you're striving for absolute best-in-class output power and optimized thermal and electrical efficiency from your next high-power amplifier (HPA), know that we're committed to resolving these and every other RF power amplification challenge with you.
Not only we support your current applications with a full selection of the most advanced integrated RF power amplifier modules and subsystems, we're also committed to supporting your legacy programs and custom design requirements.
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