200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53
2026-06-16
The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.
Saturated Output Power
The amplifier delivers a typical saturated output power (Psat) of 53.5dBm (200W) under full drive conditions. This capability supports applications requiring maximum available RF output power.
Linear Output Performance
The amplifier delivers a typical output power of 51dBm at P1dB compression., providing strong linear power capability for applications that require high output levels while maintaining signal quality.
Gain & Signal Purity
The system provides 53–55dB gain with ±1dB typical gain flatness across the operating band. Typical spurious performance of -70dBc helps minimize unwanted emissions and maintain signal integrity.
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200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53
The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.
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2026-06-16
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200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53
The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.
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Why RF Amplifier Manufacturers Always Ask About Your Application
Frequency, power, and gain define the starting point. Application defines the solution. The more we understand your application, the more accurately we can recommend the right amplifier for the job.
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100W Broadband RF Amplifier for EMC Immunity Testing——AVBR1060H50
AVBR1060H50 is a fully mass-produced, high-reliability broadband RF power amplifier. Optimized for EMC testing, wideband interference simulation, and RF system integration, it has been fully validated in volume production for stable and consistent field performance.
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IMD and Power Backoff: Why RF Power Amplifiers Don’t Always Run at Full Power
When selecting an RF power amplifier, maximum output power is often the first specification that attracts attention. However, in real communication systems, amplifiers are rarely operated at full rated power. Instead, they are intentionally backed off to maintain linearity and signal quality. The key reason is Intermodulation Distortion (IMD).
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1.0–2.5 GHz Wideband 50W GaN Power Amplifier with 0 dBm Drive — AVBR1025H47
The AVBR1025H47 is a compact wideband GaN power amplifier designed for RF system integration.
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dBm vs Watt in RF Engineering: Why We Need Both Units
In RF engineering, power is commonly expressed in two units: dBm and Watt (W). They describe the same physical quantity, but serve different roles in system design.
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