200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53

2026-06-16


The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.

The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.

 

Saturated Output Power

The amplifier delivers a typical saturated output power (Psat) of 53.5dBm (200W) under full drive conditions. This capability supports applications requiring maximum available RF output power.

 

Linear Output Performance

The amplifier delivers a typical output power of 51dBm at P1dB compression., providing strong linear power capability for applications that require high output levels while maintaining signal quality.

 

Gain & Signal Purity

The system provides 53–55dB gain with ±1dB typical gain flatness across the operating band. Typical spurious performance of -70dBc helps minimize unwanted emissions and maintain signal integrity.

200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53

The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.

2026-06-16



200W Psat. 51dBm P1dB. 2–6 GHz — AVBR2060U53

The AVBR2060U53 is a high-power solid-state RF amplifier based on GaN technology. Covering a 2–6GHz instantaneous bandwidth, it combines high gain, high output power, and integrated protection functions in a single platform for broadband RF applications.

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