Explore AmpliVisionS' 6–18 GHz High Power Amplifier Lineup
2025-08-06
🔶 At AmpliVisions, we are excited to introduce two high-performance solid-state broadband power amplifier systems, designed for 6–18 GHz CW and pulse applications, including radar, EW, and EMC systems.
💡 Key Highlights:
📡 Model 1: AVBR60180U49 | 80W Psat | 48 dB Gain
Frequency Range: 6–18 GHz
Psat: 49 dBm typ. (80W)
Gain: 51 dB typ.
Solid-state Class AB broadband design
Utilizes the latest high-power GaN transistors
Built-in control, monitoring, and protection
Ideal for CW/Pulse Radar and EMC applications
⚡ Model 2: AVBR60180U50 | 100W Psat | 50 dB Gain
Frequency Range: 6–18 GHz
Psat: 50 dBm
Gain: 50 dB
Compact, lightweight and robust design
Built-in control, monitoring, and protection circuits
Suitable for high-reliability CW or pulse systems
Both amplifiers feature 50-ohm input/output impedance and optional ALC/MGC. Designed for modern RF needs, with emphasis on stability, efficiency, and rugged performance.
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Turning GaN Power into 200W Per Channel – Meet the AVNP9250H53-T4
The AVNP9250H53-T4 is a 4-channel, high-gain solid-state broadband pulsed amplifier designed to deliver reliable performance in demanding radar and pulse applications. Each channel provides 200W Psat, ensuring robust output power across the 8.9–9.6 GHz frequency range. Built with the latest high-power GaN transistors, it integrates advanced control, monitoring, and protection circuits to guarantee high availability and dependable operation.
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2025-09-18
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Turning GaN Power into 200W Per Channel – Meet the AVNP9250H53-T4
The AVNP9250H53-T4 is a 4-channel, high-gain solid-state broadband pulsed amplifier designed to deliver reliable performance in demanding radar and pulse applications. Each channel provides 200W Psat, ensuring robust output power across the 8.9–9.6 GHz frequency range. Built with the latest high-power GaN transistors, it integrates advanced control, monitoring, and protection circuits to guarantee high availability and dependable operation.
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GaN technology is setting the pace for RF innovation in 2025
GaN continues to dominate the RF power landscape. Over the past few years, two clear trends have become evident
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Breakthrough in 19GHz Direct RF Sampling – Transforming Satellite Communication & Radar Systems
Direct RF sampling enables high-frequency signals to be captured directly, simplifying system design, enhancing reliability, and reducing power consumption – the “crown jewel” of signal processing. Recently, China launched its first 4-channel, 12-bit, 40GSPS high-speed RF direct-sampling ADC, featuring a 19GHz analog input bandwidth – a milestone that positions China at the forefront of high-end RF technology.
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Turning GaN Potential into 800W of RF Power
Every pulse matters. Every watt counts. The AVNP5600H59 delivers 800W of solid-state RF power in a compact, high-gain amplifier designed for demanding pulsed applications. Leveraging advanced GaN transistor technology, this amplifier combines efficiency, reliability, and intelligent control in a single module.
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Powering Safer Skies: RF Trends in Weather & Defense Radar
Across the Asia-Pacific region, governments are actively investing in upgrading weather radar and border surveillance systems over 2025–2026. The drivers are clear: extreme weather events are becoming more frequent and intense, and security challenges—from drones to maritime monitoring—demand better, faster, and more reliable radar coverage.
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Power Meets Precision: L-Band Pulsed High Power Amplifiers
AmpliVisionS brings you a lineup of high-power, compact L-band pulsed amplifiers built with the latest GaN transistors and advanced power-combining technology. Designed for marine, airborne, and weather radar systems, these amplifiers deliver reliable performance in demanding civil and military environments.
AmpliVisionS
Tell: +86(28)61892455
E-mail: info@amplivisions.com
Address: 611731, 555 Tianjiao Road, High-Tech (West) Zone, Chengdu City, P.R. China
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