GaN technology is setting the pace for RF innovation in 2025

2025-09-17


GaN continues to dominate the RF power landscape. Over the past few years, two clear trends have become evident

In 2025, GaN continues to dominate the RF power landscape. Over the past few years, two clear trends have become evident:

 

✔️ Costs are decreasing as larger wafer sizes and improved manufacturing processes make GaN more accessible.
✔️ Performance is increasing — with higher power density, better thermal handling, and improved efficiency enabling more demanding applications.

 

These shifts are not just incremental; they are reshaping the way next-generation radar, satcom, and wireless infrastructure systems are designed.

 

At AmpliVisions, we see this momentum accelerating, opening up new opportunities for engineers and system designers worldwide.

 

👉 How do you see GaN influencing your projects in the coming years?

50W RF Power Amplifier That Delivers More — AVBR2570H47

The AVBR2570H47 is a high-performance 50W solid-state broadband RF power amplifier, designed to meet the demanding requirements of modern RF systems. Built with the latest high-power GaN transistor technology, it integrates advanced control, monitoring, and protection functions to ensure reliable operation and high system availability.

2025-12-18



50W RF Power Amplifier That Delivers More — AVBR2570H47

The AVBR2570H47 is a high-performance 50W solid-state broadband RF power amplifier, designed to meet the demanding requirements of modern RF systems. Built with the latest high-power GaN transistor technology, it integrates advanced control, monitoring, and protection functions to ensure reliable operation and high system availability.

Holiday signals are strong this week!

As the holiday season arrives, all of us at AmpliVisionS would like to extend our warmest greetings and sincere thanks to you.

LDMOS vs GaN: A Silent Battle for RF Power

In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.

30W Wideband RF Amplifier with High Gain

The AVBR1060H45 is a 30W high-gain, solid-state, broadband power amplifier. It utilizes the latest high-power RF GaN transistors and features built-in control and monitoring, along with protection functions to ensure high availability.

Low-Spurious Output Becomes New Competitive Focus

As 5G/6G networks, satellite internet, and automotive radar rapidly expand, RF power amplifiers are facing a new competitive focus. Beyond output power and efficiency, the industry is placing greater emphasis on controlling spurious output (Spur), a shift that is redefining technology roadmaps and becoming essential for global market access.

100W High-Efficiency Amplifier with Ultra-Low Spurious Signals—AVBR0510H50

The AVBR0510H50 is a 100W high gain Solid State Broadband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability.