AVBC0727H47: Compact 50W Broadband GaN Power Amplifier with 37dB Gain

2025-10-21


The AVBC0727H47 is a 50 W broadband GaN power amplifier designed for 0.7–2.7 GHz operation. With 37 dB gain, high efficiency, and excellent linearity, it’s ideal for CW, pulse, and modulated signal systems.

 

💡 Proven in Volume Production — this model has already been successfully deployed in multiple system integrations, ensuring stable performance and long-term reliability in real-world applications.

Key Features:
 

✅ Frequency Range: 0.7 – 2.7 GHz
✅ Output Power: 50 W (Psat Typ. 47 dBm)
✅ Gain: 37 dB Typ.
✅ High Efficiency & Linearity
✅ Compact and Rugged Design
✅ Built-in Protection & Monitoring
✅ 50 Ω Input/Output

LDMOS vs GaN: A Silent Battle for RF Power

In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.

2025-12-11



LDMOS vs GaN: A Silent Battle for RF Power

In the RF power world, one of the most important technology shifts isn’t loud or headline-grabbing—it’s quiet, steady, and happening inside every new amplifier design. The long-established LDMOS technology and the fast-rising GaN devices are engaged in a silent battle, each pushing the boundaries of what modern RF systems can achieve.

30W Wideband RF Amplifier with High Gain

The AVBR1060H45 is a 30W high-gain, solid-state, broadband power amplifier. It utilizes the latest high-power RF GaN transistors and features built-in control and monitoring, along with protection functions to ensure high availability.

Low-Spurious Output Becomes New Competitive Focus

As 5G/6G networks, satellite internet, and automotive radar rapidly expand, RF power amplifiers are facing a new competitive focus. Beyond output power and efficiency, the industry is placing greater emphasis on controlling spurious output (Spur), a shift that is redefining technology roadmaps and becoming essential for global market access.

100W High-Efficiency Amplifier with Ultra-Low Spurious Signals—AVBR0510H50

The AVBR0510H50 is a 100W high gain Solid State Broadband High Power Amplifier. This amplifier module utilizes the latest high power RF LDMOS transistors and also features built in control and monitoring, with protection functions to ensure high availability.

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As wireless communication, radar, and advanced testing systems evolve, RF Power Amplifiers (RFPAs) have become key components determining overall system performance. Industry demand is shifting from a focus on raw power output to integrated requirements for high performance, stability, and intelligence, making the selection of the right RFPA critical to project timelines and application success.

A Mass-Produced 70W Broadband Amplifier with Over 40% Efficiency—AVBC0307H49

The AVBC0307H49 is a 70W high-gain solid-state broadband high power amplifier designed for mission-critical applications. Built with the latest high-power RF LDMOS transistors, it integrates intelligent control, real-time monitoring, and multiple layers of protection to ensure long-term stability and availability. Its broadband performance makes it an excellent choice for jamming systems and EMC testing.